2009-08-18 page 1 rev. 2.1 bsp125 sipmos ? power-transistor product summary v ds 600 v r ds(on) 45 ? i d 0.12 a feature ? n-channel ? enhancement mode ? logic level ? d v /d t rated pg-sot223 marking bsp125 type package tape and reel information bsp125 pg-sot223 l6433: 4000 pcs/reel maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d 0.12 0.1 a pulsed drain current t a =25c i d puls 0.48 reverse diode d v /d t i s =0.12a, v ds =480v, d i /d t =200a/s, t jmax =175c d v /d t 6 kv/s gate source voltage v gs 20 v esd class (jesd22-a114-hbm) 1a (>250v, <500v) power dissipation t a =25c, t a =25 p tot 1.8 w operating and storage temperature t j , t stg -55... +150 c iec climatic category; din iec 68-1 55/150/56 pb-free lead plating; rohs compliant ? bsp125 pg-sot223 l6327: 1000 pcs/reel rohs compliant yes yes bsp125 packaging non dry x qualified according to aec q101 non dry
2009-08-18 page 2 rev. 2.1 bsp125 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - soldering point (pin 4) r thjs - - 25 k/w smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - - 115 70 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =0.25ma v (br)dss 600 - - v gate threshold voltage, v gs = v ds i d =94a v gs(th) 1.3 1.9 2.3 zero gate voltage drain current v ds =600v, v gs =0, t j =25c v ds =600v, v gs =0, t j =125c i dss - - - - 0.1 5 a gate-source leakage current v gs =20v, v ds =0 i gss - 10 100 na drain-source on-state resistance v gs =4.5v, i d =0.11a r ds(on) - 26 60 drain-source on-state resistance v gs =10v, i d =0.12a r ds(on) - 25 45 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2009-08-18 page 3 rev. 2.1 bsp125 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =0.1a 0.06 0.18 - s input capacitance c iss v gs =0, v ds =25v, f =1mhz - 100 150 pf output capacitance c oss - 8.2 12.3 reverse transfer capacitance c rss - 3.2 4.8 turn-on delay time t d(on) v dd =300v, v gs =10v, i d =0.13a, r g =6 - 7.7 11.6 ns rise time t r - 14.4 21 turn-off delay time t d(off) - 20 30 fall time t f - 110 165 gate charge characteristics gate to source charge q gs v dd =400v, i d =0.13a - 0.27 0.3 nc gate to drain charge q gd - 2.3 3.5 gate charge total q g v dd =400v, i d =0.13a, v gs =0 to 10v - 4.4 6.6 gate plateau voltage v (plateau) v dd =400v, i d =0.13a - 3.44 - v reverse diode inverse diode continuous forward current i s t a =25c - - 0.12 a inv. diode direct current, pulsed i sm - - 0.48 inverse diode forward voltage v sd v gs =0, i f =0.12a - 0.8 1.2 v reverse recovery time t rr v r =300v, i f = l s , d i f /d t =100a/s - 156 235 ns reverse recovery charge q rr - 165 250 nc
2009-08-18 page 4 rev. 2.1 bsp125 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 w 1.9 bsp125 p tot 2 drain current i d = f ( t a ) parameter: v gs 10 v 0 20 40 60 80 100 120 c 160 t a 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.11 a 0.13 bsp125 i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 10 0 10 1 10 2 10 3 v v ds -3 10 -2 10 -1 10 0 10 1 10 a bsp125 i d r ds(on) = v ds / i d dc 10 ms 1 ms t p = 270.0 s 4 transient thermal impedance z thja = f ( t p ) parameter : d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t p -2 10 -1 10 0 10 1 10 2 10 k/w bsp125 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2009-08-18 page 5 rev. 2.1 bsp125 5 typ. output characteristic i d = f ( v ds ) parameter: t j = 25 c, v gs 0 1 2 3 4 5 6 7 8 v 10 v ds 0 0.05 0.1 0.15 0.2 a 0.3 i d 10v 6.0v 5.0v 4.0v 3.8v 3.6v 3.2v 3.0v 2.8v 2.6v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j = 25 c, v gs 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 a 0.5 i d 0 20 40 60 100 r ds(on) 2.6v 2.8v 3.0v 3.2v 3.6v 4.0v 5.0v 6.0v 10v 7 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t j = 25 c 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v gs 0 0.1 0.2 0.3 a 0.5 i d 8 typ. forward transconductance g fs = f( i d ) parameter: t j = 25 c 0 0.1 0.2 0.3 a 0.5 i d 0 0.05 0.1 0.15 0.2 0.25 0.3 s 0.4 g fs
2009-08-18 page 6 rev. 2.1 bsp125 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 0.12 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 20 40 60 80 100 120 140 170 bsp125 r ds(on) typ 98% (.) typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds ; i d =94a -60 -20 20 60 100 c 160 tj 0 0.4 0.8 1.2 1.6 2 2.8 v gs(th ) 2% typ. 98% 11 typ. capacitances c = f ( v ds ) parameter: v gs =0, f =1 mhz, t j = 25 c 0 8 16 24 32 40 v 52 v ds 0 10 1 10 2 10 3 10 pf c 12 forward character. of reverse diode i f = f (v sd ) parameter: t j 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -3 10 -2 10 -1 10 0 10 a bsp125 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
2009-08-18 page 7 rev. 2.1 bsp125 13 typ. gate charge v gs = f ( q g ); parameter: v ds , i d = 0.12 a pulsed, t j = 25 c 0 1 2 3 4 5 nc 6.5 q g 0 2 4 6 8 10 12 v 16 bsp125 v gs 0.2 v ds max 0.5 v ds max 0.8 v ds max 14 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 540 560 580 600 620 640 660 680 v 720 bsp125 v (br)dss
2009-08-18 page 8 rev. 2.1 bsp125
|
